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APTGF150DH120
Asymmetrical - Bridge NPT IGBT Power Module
VCES = 1200V IC = 150A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration
OUT1 G1 E1 E4 G4 OUT2 VBUS 0/VBUS
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Tc = 25C Tj = 150C
V W
300A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTGF150DH120 - Rev 1 March, 2004
Tc = 25C Tc = 80C Tc = 25C
Max ratings 1200 200 150 400 20 1040
Unit V A
APTGF150DH120
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 2mA Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 150A Tj = 125C VGE = VCE, IC = 5 mA VGE = 20V, VCE = 0V Min
1200
Typ 0.2 12 3.3 4
Max 3 3.9 6.5 500
Unit V mA V V nA
4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A RG = 5
Min
Typ 10.5 1.5 0.8 70 50 500 30 8.5 9
Max
Unit nF
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic IF(AV) VF Maximum Average Forward Current Diode Forward Voltage
Test Conditions
50% duty cycle
Min Tc = 70C
Typ 200 2.0 2.3 1.8 420 580 2.5 10.7
Max 2.5
Unit A V
IF = 200A IF = 400A IF = 200A IF = 200A VR = 800V di/dt =400A/s IF = 200A VR = 800V di/dt =400A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns C
APT website - http://www.advancedpower.com
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APTGF150DH120 - Rev 1 March, 2004
APTGF150DH120
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque For terminals Package Weight IGBT Diode 2500 -40 -40 -40 3 2 150 125 100 5 3.5 280 Min Typ Max 0.12 0.32 Unit C/W V C N.m g
M6 M5
Package outline
APT website - http://www.advancedpower.com
3-5
APTGF150DH120 - Rev 1 March, 2004
APTGF150DH120
Typical Performance Curve
Output characteristics (VGE=15V) 225 Ic, Collector current (A) Ic, Collector current (A) 200 175 150 125 100 75 50 25 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics
250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle
Output characteristics (VGE=10V) 175 150 125 100 75 50 25 0 4 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 150A TJ = 25C VCE=600V 4 TJ=125 C
250s Pulse Test < 0.5% Duty cycle
TJ=25 C
TJ=25 C
TJ=125 C
250 200 150 100 50 0 4
VGE, Gate to Emitter Voltage (V)
300 Ic, Collector Current (A)
20 16 12 8 4 0
0 250
VCE=800V
6 8 10 VGE, Gate to Emitter Voltage (V)
12
500 750 1000 Gate Charge (nC)
1250
1000
Switching times vs collector current
tdoff
VCE = 600V VGE=15V RG=5 TJ = 125C
100
C, Capacitance (nF)
Capacitance vs Collector to Emitter Voltage
time (ns)
10
Cies
100
tdon tf
Coes 1 Cres 0.1
tr
10 0 50 100 150 Ic, Collector current (A) 200
0
5
10
15
20
25
30
VCE, Collector to Emitter Voltage (V) DC Collector Current vs Case Temperature 200 Ic, DC Collector Current (A) 175 150 125
Switching energy losses vs Gate resistance 60 Switching Energy losses (mJ)
50 40 30 20 10 0 0
VCE = 600V VGE=15V IC=150A TJ = 125C
Eon
Eoff
75 50 25 0 0 25 50 75 100 125 TC, Case Temperature ( C) 150
4
8 12 16 20 24 Gate resistance (Ohms)
28
32
APT website - http://www.advancedpower.com
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APTGF150DH120 - Rev 1 March, 2004
100
APTGF150DH120
350 Area
IC, Collector current (A) Minimum Switching Safe Operating 10000 Switching times vs gate resistor VCE = 600V, VGE=15V IC=150A, TJ = 125C time (ns) 1000 tdon 100 tr tf 10
300 250 200 150 100 50 0 0 300 600 900 1200 1500 VCE, Collector to Emitter Voltage (V)
0
tdoff
10 20 30 Gate resistance (Ohms)
40
0.14 Thermal Impedance ( C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1 0.05 0.0001
Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 0 50 100 150 IC, Collector Current (A) 200 VCE = 800V D = 50% RG = 5 TJ = 125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF150DH120 - Rev 1 March, 2004

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